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Datasheet File OCR Text:

NAND01GW3A2B-KGD NAND01GW4A2B-KGD
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
Features
High density NAND Flash memory - 1 Gbit memory array - 32 Mbit spare area - Cost effective solutions for mass storage applications NAND interface - x 8 or x 16 bus width - Multiplexed Address/ Data - Pinout compatibility for all densities Supply voltage: - 3.0 V device: VDD = 2.7 to 3.6 V Page size - x 8 device: (512 + 16 spare) bytes - x 16 device: (256 + 8 spare) words Block size - x 8 device: (16 K + 512 spare) bytes - x 16 device: (8 K + 256 spare) words Page Read / Program - Random access: 15 s (3 V) (max) - Sequential access: 50 ns (min) - Page program time: 200 s (typ) Copy Back Program mode - Fast page copy without external buffering Fast Block Erase - Block erase time: 2 ms (typ) Status Register Electronic signature Chip Enable `Don't care' - Simple interface with microcontroller
Wafer

Serial Number option Hardware Data Protection - Program/Erase locked during Power transitions Data Integrity - 100,000 Program/Erase cycles (with ECC) - 10 years Data Retention

January 2008
Rev 3
1/48
www.numonyx.com 1
Contents
NAND01GWxA2B-KGD
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1 Bad Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 Inputs/Outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Inputs/Outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 VDD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1 4.2 4.3 4.4 4.5 4.6 Command Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Address Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Write Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5 6
Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.1 6.2 Pointer operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Read Memory Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2.1 Random Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/48
NAND01GWxA2B-KGD 6.2.2
Contents Page Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3 6.4 6.5 6.6 6.7
Page Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Copy Back Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Block Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Read Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.7.1 6.7.2 6.7.3 6.7.4 Write Protection bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 P/E/R Controller bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Error bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 SR5, SR4, SR3, SR2 and SR1 are reserved . . . . . . . . . . . . . . . . . . . . . 23
6.8
Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7
Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.1 7.2 7.3 7.4 7.5 Bad Block Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 NAND Flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Error Correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8 9 10
Program and Erase times and endurance cycles . . . . . . . . . . . . . . . . . 29 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
10.1 10.2 Ready/Busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . 44 Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
11 12
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3/48
List of tables
NAND01GWxA2B-KGD
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Valid blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Address Insertion, x 8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Address Insertion, x 16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Address definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Copy Back Program addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 NAND Flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Program, Erase Times and Program Erase endurance cycles. . . . . . . . . . . . . . . . . . . . . . 29 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 AC characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 AC characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
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NAND01GWxA2B-KGD
List of figures
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pointer operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Read (A,B,C) operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Read block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Page Program operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Copy Back operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Block Erase operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bad Block Management flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Equivalent testing circuit for AC characteristics measurement . . . . . . . . . . . . . . . . . . . . . . 32 Command Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Address Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Data Input Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Sequential Data Output after Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Read Status Register AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Read Electronic Signature AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Page Read A/ Read B Operation AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Read C Operation, One Page AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Page Program AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Block Erase AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Reset AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Program/Erase Enable waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Program/Erase Disable waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Ready/Busy AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Ready/Busy load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Resistor value versus waveform timings for Ready/Busy signal. . . . . . . . . . . . . . . . . . . . . 45 Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
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Description
NAND01GWxA2B-KGD
1
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND01GW3A2B-KGD and NAND01GW4A2B-KGD have a density of 1 Gbits. It operates from a 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 and x16 Input/Output bus on the NAND01GW3A2B-KGD and NAND01GW4A2B-KGD, respectively. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles (with ECC). To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations. The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed. The devices are available in unsawn wafer format for multichip package products (MCPs). They have the Chip Enable Don't Care option, which allows the code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation. A Serial Number option, allows each device to be uniquely identified. The Serial Number options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest Numonyx Sales office. For information on how to order these options refer to Table 20: Ordering Information Scheme. Devices are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to '1'. See Table 1: Product description, for all the devices available.
Table 1.
Product description
Timings Bus Width Page Size Block Size Memory Array Operating Voltage
Part Number
Density
Random Access (Max)
Sequential Access (Min)
Page Program Typical
Block Erase Typical
Package
NAND01GW3A2BKGD 1 Gbit NAND01GW4A2BKGD
x8 256+8 Words x16 8K+256 Words
32 Pages x 8192 Blocks
2.7 to 3.6V
15s
50ns
200s
2ms
Known Good Die for MCP
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NAND01GWxA2B-KGD Figure 1. Logic diagram
Description
VDD
I/O8-I/O15, x16 E I/O0-I/O7, x8/x16 R W AL CL WP NAND Flash RB
VSS
AI07557C
Table 2.
Signal names
I/O8-15 I/O0-7 AL CL E R RB W WP VDD VSS NC DU Data Input/Outputs for x16 devices Data Input/Outputs, Address Inputs, or Command Inputs for x8 and x16 devices Address Latch Enable Command Latch Enable Chip Enable Read Enable Ready/Busy (open-drain output) Write Enable Write Protect Supply Voltage Ground Not Connected Internally Do Not Use
7/48
Description Figure 2. Logic block diagram
NAND01GWxA2B-KGD
Address Register/Counter X Decoder
AL CL W E WP R Command Interface Logic P/E/R Controller, High Voltage Generator
NAND Flash Memory Array
Page Buffer Command Register Y Decoder
I/O Buffers & Latches
RB I/O0-I/O7, x8/x16 I/O8-I/O15, x16
AI07561c
8/48
NAND01GWxA2B-KGD
Memory array organization
2
Memory array organization
The memory array is made up of NAND structures where 16 cells are connected in series. The memory array is organized in blocks where each block contains 32 pages. The array is split into two areas, the main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used to store Error correction Codes, software flags or Bad Block identification. In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and a spare area of 16 Bytes. In the x16 devices the pages are split into a 256 Word main area and an 8 Word spare area. Refer to Figure 3: Memory array organization.
2.1
Bad blocks
The NAND Flash 528 byte/ 264 word page devices may contain Bad Blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional Bad Blocks may develop during the lifetime of the device. The Bad Block Information is written prior to shipping (refer to Section 7.1: Bad Block Management for more details). Table 3 shows the minimum number of valid blocks in each device. The values shown include both the Bad Blocks that are present when the device is shipped and the Bad Blocks that could develop later on. These blocks need to be managed using Bad Blocks Management, Block Replacement or Error Correction Codes (refer to Section 7: Software algorithms). Table 3. Valid blocks
Density of device 1 Gbit Min 8032 Max 8192
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Memory array organization Figure 3. Memory array organization
NAND01GWxA2B-KGD
x8 DEVICES
Block = 32 Pages Page = 528 Bytes (512+16)
x16 DEVICES
Block = 32 Pages Page = 264 Words (256+8)
a Sp
re
Are
a
1st half Page 2nd half Page (256 bytes) (256 bytes) Block Page Block Page 8 bits 512 Bytes 16 Bytes
Main Area
a Sp
re
Are
a
16 bits 256 Words 8 Words
Page Buffer, 512 Bytes 512 Bytes
16 Bytes
Page Buffer, 264 Words 8 bits 256 Words 8 Words 16 bits
AI07587
10/48
NAND01GWxA2B-KGD
Signal descriptions
3
Signal descriptions
See Figure 1: Logic diagram, and Table 2: Signal names, for a brief overview of the signals connected to this device.
3.1
Inputs/Outputs (I/O0-I/O7)
Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read operation or input a command or data during a Write operation. The inputs are latched on the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or the outputs are disabled.
3.2
Inputs/Outputs (I/O8-I/O15)
Input/Outputs 8 to 15 are only available in x16 devices. They are used to output the data during a Read operation or input data during a Write operation. Command and Address Inputs only require I/O0 to I/O7. The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when the device is deselected or the outputs are disabled.
3.3
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the Address inputs in the Command Interface. When AL is high, the inputs are latched on the rising edge of Write Enable.
3.4
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the Command inputs in the Command Interface. When CL is high, the inputs are latched on the rising edge of Write Enable.
3.5
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and read circuitry. When Chip Enable is low, VIL, the device is selected. If Chip Enable goes High (VIH) while the device is busy, the device remains selected and does not go into standby mode.
3.6
Read Enable (R)
The Read Enable, R, controls the sequential data output during Read operations. Data is valid tRLQV after the falling edge of R. The falling edge of R also increments the internal column address counter by one.
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Signal descriptions
NAND01GWxA2B-KGD
3.7
Write Enable (W)
The Write Enable input, W, controls writing to the Command Interface, Input Address and Data latches. Both addresses and data are latched on the rising edge of Write Enable. During power-up and power-down a recovery time of 10 s (min) is required before the Command Interface is ready to accept a command. It is recommended to keep Write Enable high during the recovery time.
3.8
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program or erase operations. When Write Protect is Low, VIL, the device does not accept any program or erase operations. It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R Controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the operation completes Ready/Busy goes High, VOH. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Refer to Section 10.1: Ready/Busy signal electrical characteristics for details on how to calculate the value of the pull-up resistor.
3.10
VDD Supply Voltage
VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (read, program and erase). An internal voltage detector disables all functions whenever VDD is below the VLKO threshold (see Figure 30: Data protection) to protect the device from any involuntary Program/Erase operations during power-transitions. Each device in a system should have VDD decoupled with a 0.1F capacitor. The PCB track widths should be sufficient to carry the required program and erase currents
3.11
VSS Ground
Ground, VSS, is the reference for the power supply. It must be connected to the system ground.
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NAND01GWxA2B-KGD
Bus operations
4
Bus operations
There are six standard bus operations that control the memory. Each of these is described in this section, see Table 4: Bus operations, for a summary.
4.1
Command Input
Command Input bus operations are used to give commands to the memory. Command are accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input commands. See Figure 14 and Table 18 for details of the timings requirements.
4.2
Address Input
Address Input bus operations are used to input the memory address. Four bus cycles are required to input the addresses (refer to Table 5 and Table 6, Address Insertion). The addresses are accepted when Chip Enable is Low, Address Latch Enable is High, Command Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses. See Figure 15 and Table 18 for details of the timings requirements.
4.3
Data Input
Data Input bus operations are used to input the data to be programmed. Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the Write Enable signal. The data is input sequentially using the Write Enable signal. See Figure 16, Table 18 and Table 20 for details of the timings requirements.
4.4
Data Output
Data Output bus operations are used to read: the data in the memory array, the Status Register, the Electronic Signature and the Serial Number. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal. See Figure 17 and Table 20 for details of the timings requirements.
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Bus operations
NAND01GWxA2B-KGD
4.5
Write Protect
Write Protect bus operations are used to protect the memory against program or erase operations. When the Write Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up.
4.6
Standby
When Chip Enable is High the memory enters Standby mode, the device is deselected, outputs are disabled and power consumption is reduced. Table 4. Bus operations
E VIL VIL VIL VIL X VIH AL VIL VIH VIL VIL X X CL VIH VIL VIL VIL X X R VIH VIH VIH Falling X X W Rising Rising Rising VIH X X WP X(2) X X X VIL X I/O0 - I/O7 Command Address Data Input Data Output X X I/O8 - I/O15(1) X X Data Input Data Output X X
Bus operation Command Input Address Input Data Input Data Output Write Protect Standby
1. Only for x16 devices. 2. WP must be VIH when issuing a program or erase command.
Table 5.
Bus cycle 1st 2nd 3
rd
Address Insertion, x 8 devices(1)(2)
I/O7 A7 A16 A24 VIL I/O6 A6 A15 A23 VIL I/O5 A5 A14 A22 VIL I/O4 A4 A13 A21 VIL I/O3 A3 A12 A20 VIL I/O2 A2 A11 A19 VIL I/O1 A1 A10 A18 A26 I/O0 A0 A9 A17 A25
4th
1. A8 is set Low or High by the 00h or 01h Command, see Section 6.1: Pointer operations. 2. Any additional address input cycles will be ignored.
Table 6.
Bus cycle 1st 2nd 3rd 4th
Address Insertion, x 16 devices(1)(2)(3)
I/O8I/O15 I/O7 A7 A16 VIL A24 VIL I/O6 A6 A15 A23 VIL I/O5 A5 A14 A22 VIL I/O4 A4 A13 A21 VIL I/O3 A3 A12 A20 VIL I/O2 A2 A11 A19 VIL I/O1 A1 A10 A18 A26 I/O0 A0 A9 A17 A25
1. A8 is Don't care in x 16 devices. 2. Any additional address input cycles will be ignored. 3. The 01h command is not used in x 16 devices.
14/48
NAND01GWxA2B-KGD Table 7. Address definitions
Address A0 - A7 A9 - A26 A9 - A13 A14 - A26 A8 Definition
Bus operations
Column Address Page Address Address in Block Block Address A8 is set Low or High by the 00h or 01h Command, and is Don't care in x 16 devices
15/48
Command set
NAND01GWxA2B-KGD
5
Command set
All bus write operations to the device are interpreted by the Command Interface. The Commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when the Command Latch Enable signal is high. Device operations are selected by writing specific commands to the Command Register. The two-step command sequences for program and erase operations are imposed to maximize data security. The Commands are summarized in Table 8: Commands. Table 8. Commands
Bus Write operations(1) Command Read A Read B Read C Read Electronic Signature Read Status Register Page Program Copy Back Program Block Erase Reset 1st cycle 00h 01h(2) 50h 90h 70h 80h 00h 60h FFh 2nd cycle 10h 8Ah D0h 3rd cycle 10h Yes Yes Command accepted during busy
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown. 2. Don't Care in x 16 devices.
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NAND01GWxA2B-KGD
Device operations
6
6.1
Device operations
Pointer operations
As the NAND Flash memories contain two different areas for x 16 devices and three different areas for x 8 devices (see Figure 4) the read command codes (00h, 01h, 50h) are used to act as pointers to the different areas of the memory array (they select the most significant column address). The Read A and Read B commands act as pointers to the main memory area. Their use depends on the bus width of the device.

In x 16 devices the Read A command (00h) sets the pointer to Area A (the whole of the main area) that is words 0 to 255. In x 8 devices the Read A command (00h) sets the pointer to Area A (the first half of the main area) that is bytes 0 to 255, and the Read B command (01h) sets the pointer to Area B (the second half of the main area) that is bytes 256 to 511.
In both the x8 and x16 devices the Read C command (50h), acts as a pointer to Area C (the spare memory area) that is bytes 512 to 527 or words 256 to 263. Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been executed in Area B the pointer returns automatically to Area A. Figure 4. Pointer operations
x8 Devices Area A (00h) Bytes 0- 255 Area B (01h) Area C (50h) x16 Devices Area A (00h) Words 0- 255 Area C (50h) Words 256 -263
Bytes 256-511 Bytes 512 -527
A
B
C
Page Buffer
A
C
Page Buffer
Pointer (00h,01h,50h)
Pointer (00h,50h)
AI07592
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Device operations
NAND01GWxA2B-KGD
6.2
Read Memory Array
Each operation to read the memory area starts with a pointer operation as shown in the Section 6.1: Pointer operations. Once the area (main or spare) has been selected using the Read A, Read B or Read C commands, four bus cycles are required to input the address (refer to Table 5) of the data to be read. The device defaults to Read A mode after power-up or a Reset operation. When reading the spare area addresses:

A0 to A3 (x 8 devices) A0 to A2 (x 16 devices) A4 to A7 (x 8 devices) A3 to A7 (x 16 devices)
are used to set the start address of the spare area while addresses:

are ignored. Once the Read A or Read C commands have been issued they do not need to be reissued for subsequent read operations as the pointer remains in the respective area. However, the Read B command is effective for only one operation, once an operation has been executed in Area B the pointer returns automatically to Area A and so another Read B command is required to start another read operation in Area B. Once a read command is issued two types of operations are available: Random Read and Page Read.
6.2.1
Random Read
Each time the command is issued the first read is Random Read.
6.2.2
Page Read
After the Random Read access the page data is transferred to the Page Buffer in a time of tWHBH (refer to Table 20 for value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially (from selected column address to last column address) by pulsing the Read Enable signal.
18/48
NAND01GWxA2B-KGD Figure 5. Read (A,B,C) operations
Device operations
CL
E
W
AL
R tBLBH1 (read) RB
I/O
00h/ 01h/ 50h Command Code
Address Input
Data Output (sequentially)
Busy
ai07595c
Figure 6.
Read block diagrams
Read A Command, X8 Devices
Area B Area A Area C (1st half Page) (2nd half Page) (Spare) A9-A26 A0-A7 A9-A26 A0-A7
Read A Command, X16 Devices
Area A (main area) Area C (Spare)
Read B Command, X8 Devices
Area B Area A Area C (1st half Page) (2nd half Page) (Spare) A9-A26 A0-A7 A9-A26 A0-A3 (x8) A0-A2 (x16)
Read C Command, X8/x16 Devices
Area A Area A/ B Area C (Spare)
A4-A7 (x8), A3-A7 (x16) are don't care
AI13144
19/48
Device operations
NAND01GWxA2B-KGD
6.3
Page Program
The Page Program operation is the standard operation to program data to the memory array. The main area of the memory array is programmed by page, however partial page programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be programmed. The maximum number of consecutive partial page program operations allowed in the same page is three. After exceeding this a Block Erase command must be issued before any further program operations can take place in that page. Before starting a Page Program operation a Pointer operation can be performed to point to the area to be programmed. Refer to the Section 6.1: Pointer operations and Figure 5 for details. Each Page Program operation consists of five steps (see Figure 7): 1. 2. 3. 4. 5. One bus cycle is required to setup the Page Program command Four bus cycles are then required to input the program address (refer to Table 5) The data is then input (up to 528 bytes/ 264 words) and loaded into the Page Buffer One bus cycle is required to issue the confirm command to start the P/E/R Controller. The P/E/R Controller then programs the data into the array.
Once the program operation has started the Status Register can be read using the Read Status Register command. During program operations the Status Register will only flag errors for bits set to '1' that have not been successfully programmed to '0'. During the program operation, only the Read Status Register and Reset commands will be accepted, all other commands will be ignored. Once the program operation has completed the P/E/R Controller bit SR6 is set to `1' and the Ready/Busy signal goes High. The device remains in Read Status Register mode until another valid command is written to the Command Interface. Figure 7. Page Program operation
tBLBH2
(Program Busy time)
RB Busy I/O 80h Page Program Setup Code Address Inputs Data Input 10h Confirm Code 70h SR0
Read Status Register
ai07566
1. Before starting a Page Program operation a Pointer operation can be performed. Refer to Section 6.1: Pointer operations for details.
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NAND01GWxA2B-KGD
Device operations
6.4
Copy Back Program
The Copy Back Program operation is used to copy the data stored in one page and reprogram it in another page. The Copy Back Program operation does not require external memory and so the operation is faster and more efficient because the reading and loading cycles are not required. The operation is particularly useful when a portion of a block is updated and the rest of the block needs to be copied to the newly assigned block. If the Copy Back Program operation fails an error is signalled in the Status Register. However as the standard external ECC cannot be used with the Copy Back operation bit error due to charge loss cannot be detected. For this reason it is recommended to limit the number of Copy Back operations on the same data and or to improve the performance of the ECC. The Copy Back Program operation requires three steps: 1. The source page must be read using the Read A command (one bus write cycle to setup the command and then 4 bus write cycles to input the source page address). This operation copies all 264 Words/ 528 Bytes from the page into the Page Buffer. When the device returns to the ready state (Ready/Busy High), the second bus write cycle of the command is given with the 4 bus cycles to input the target page address. Refer to Table 9 for the addresses that must be the same for the Source and Target pages. Then the confirm command is issued to start the P/E/R Controller.
2.
3.
After a Copy Back Program operation, a partial-page program is not allowed in the target page until the block has been erased. See Figure 8 for an example of the Copy Back operation. Table 9. Copy Back Program addresses
Density 1 Gbit Same Address for Source and Target Pages A14, A26
Figure 8.
Copy Back operation
tBLBH1
(Read Busy time)
tBLBH2
(Program Busy time)
RB Busy I/O 00h Read Code Source Address Inputs 8Ah Copy Back Code Target Address Inputs 10h 70h SR0
Read Status Register
ai07590b
21/48
Device operations
NAND01GWxA2B-KGD
6.5
Block Erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the addressed block to `1'. All previous data in the block is lost. An erase operation consists of three steps (refer to Figure 9): 1. 2. One bus cycle is required to setup the Block Erase command. Only three bus cycles are required to input the block address. The first cycle (A0 to A7) is not required as only addresses A14 to A26 are valid, A9 to A13 are ignored. In the last address cycle I/O2 to I/O7 must be set to VIL. One bus cycle is required to issue the confirm command to start the P/E/R Controller.
3.
Once the erase operation has completed the Status Register can be checked for errors. Figure 9. Block Erase operation
tBLBH3
(Erase Busy time)
RB Busy I/O 60h Block Erase Setup Code Block Address Inputs D0h Confirm Code 70h SR0
Read Status Register
ai07593
6.6
Reset
The Reset command is used to reset the Command Interface and Status Register. If the Reset command is issued during any operation, the operation will be aborted. If it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. If the device has already been reset then the new Reset command will not be accepted. The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value of tBLBH4 depends on the operation that the device was performing when the command was issued, refer to Table 20 for the values.
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NAND01GWxA2B-KGD
Device operations
6.7
Read Status Register
The device contains a Status Register which provides information on the current or previous Program or Erase operation. The various bits in the Status Register convey information and errors on the operation. The Status Register is read by issuing the Read Status Register command. The Status Register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip Enable or Read Enable, whichever occurs last. When several memories are connected in a system, the use of Chip Enable and Read Enable signals allows the system to poll each device separately, even when the Ready/Busy pins are common-wired. It is not necessary to toggle the Chip Enable or Read Enable signals to update the contents of the Status Register. After the Read Status Register command has been issued, the device remains in Read Status Register mode until another command is issued. Therefore if a Read Status Register command is issued during a Random Read cycle a new read command must be issued to continue with a Page Read. The Status Register bits are summarized in Table 10: Status Register Bits. Refer to Table 10 in conjunction with the following text descriptions.
6.7.1
Write Protection bit (SR7)
The Write Protection bit can be used to identify if the device is protected or not. If the Write Protection bit is set to `1' the device is not protected and program or erase operations are allowed. If the Write Protection bit is set to `0' the device is protected and program or erase operations are not allowed.
6.7.2
P/E/R Controller bit (SR6)
The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or inactive. When the P/E/R Controller bit is set to `0', the P/E/R Controller is active (device is busy); when the bit is set to `1', the P/E/R Controller is inactive (device is ready).
6.7.3
Error bit (SR0)
The Error bit is used to identify if any errors have been detected by the P/E/R Controller. The Error Bit is set to '1' when a program or erase operation has failed to write the correct data to the memory. If the Error Bit is set to `0' the operation has completed successfully.
6.7.4
SR5, SR4, SR3, SR2 and SR1 are reserved
23/48
Device operations Table 10.
Bit SR7
NAND01GWxA2B-KGD Status Register Bits
Name Write Protection '0' Protected P/E/R C inactive, device ready P/E/R C active, device busy Program/ Erase/ Read Controller '1' '0' Don't care `1' Error - operation failed No Error - operation successful Logic level '1' Not Protected Definition
SR6 SR5, SR4, SR3, SR2, SR1 SR0
Reserved
Generic Error `0'
6.8
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes two steps are required: 1. 2. first use one Bus Write cycle to issue the Read Electronic Signature command (90h), followed by an address input of 00h. then perform two Bus Read operations - the first will read the Manufacturer Code and the second, the Device Code. Further Bus Read operations will be ignored.
Refer to Table 11: Electronic Signature, for information on the addresses. Table 11. Electronic Signature
Part number NAND01GW3A2B-KGD NAND01GW4A2B-KGD Manufacturer code 20h 0020h Device code 79h 0074h
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NAND01GWxA2B-KGD
Software algorithms
7
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to implement to manage the Bad Blocks and extend the lifetime of the NAND device. NAND Flash memories are programmed and erased by Fowler-Nordheim tunneling using a high voltage. Exposing the device to a high voltage for extended periods can cause the oxide layer to be damaged. For this reason, the number of program and erase cycles is limited (see Table 13 for value) and it is recommended to implement Garbage Collection, a Wear-Leveling Algorithm and an Error Correction Code, to extend the number of program and erase cycles and increase the data retention. To help integrate a NAND memory into an application Numonyx can provide File System OS Native reference software, which supports the basic commands of file management. Contact the nearest Numonyx sales office for more details.
7.1
Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased (FFh). The Bad Block Information is written prior to shipping. Any block where the 6th byte (x 8 device) / 1st word (x 16 device) in the spare area of the 1st page does not contain FFh is a Bad Block. The Bad Block Information must be read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flowchart shown in Figure 10.
7.2
NAND Flash memory failure modes
Over the lifetime of the device additional Bad Blocks may develop. To implement a highly reliable system, all the possible failure modes must be considered:
Program/Erase failure: in this case the block has to be replaced by copying the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give errors in the Status Register. As the failure of a Page Program operation does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data and copying the rest of the replaced block to an available valid block. The Copy Back Program command can be used to copy the data to a valid block. See Section 6.4: Copy Back Program for more details. Read failure: in this case, ECC correction must be implemented. To efficiently use the memory space, it is recommended to recover single-bit error in read by ECC, without replacing the whole block.
Refer to Table 12 for the procedure to follow if an error occurs during an operation.
25/48
Software algorithms Table 12. NAND Flash failure modes
Operation Erase Program Read
NAND01GWxA2B-KGD
Procedure Block Replacement Block Replacement or ECC ECC
Figure 10. Bad Block management flowchart
START
Block Address = Block 0
Increment Block Address Update Bad Block table
Data = FFh? YES
NO
Last block? YES
NO
END
AI07588C
Figure 11. Garbage collection
Old Area New Area (After GC)
Valid Page Invalid Page Free Page (Erased)
AI07599B
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NAND01GWxA2B-KGD
Software algorithms
7.3
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page, and the previous page is marked as invalid. After several updates it is necessary to remove invalid pages to free some memory space. To free this memory space and allow further program operations it is recommended to implement a Garbage Collection algorithm. In a Garbage Collection software the valid pages are copied into a free area and the block containing the invalid pages is erased (see Figure 11).
7.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a Wear-leveling Algorithm to monitor and spread the number of write cycles per block. In memories that do not use a Wear-Leveling Algorithm not all blocks get used at the same rate. The Wear-leveling Algorithm ensures that equal use is made of all the available write cycles for each block. There are two wear-leveling levels:

First Level Wear-leveling, new data is programmed to the free blocks that have had the fewest write cycles Second Level Wear-leveling, long-lived data is copied to another block so that the original block can be used for more frequently-changed data.
The Second Level Wear-leveling is triggered when the difference between the maximum and the minimum number of write cycles per block reaches a specific threshold.
7.5
Error Correction code
An Error Correction Code (ECC) can be implemented in the Nand Flash memories to identify and correct errors in the data. For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for line parity plus 6 bits for column parity). An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for more details.
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Software algorithms Figure 12. Error detection
NAND01GWxA2B-KGD
New ECC generated during read
XOR previous ECC with new ECC
All results = zero? YES 22 bit data = 0
NO
>1 bit = zero? YES 11 bit data = 1
NO
1 bit data = 1
No Error
Correctable Error
ECC Error
ai08332
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NAND01GWxA2B-KGD
Program and Erase times and endurance cycles
8
Program and Erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 13. Table 13. Program, Erase Times and Program Erase endurance cycles
NAND01GW3A2B-KGD Parameters Min Page Program Time Block Erase Time Program/Erase Cycles (per block) (with ECC) Data Retention 100,000 10 NAND01GW4A2B-KGD Typ 200 2 Max 500 3 s ms cycles years Unit
29/48
Maximum rating
NAND01GWxA2B-KGD
9
Maximum rating
Stressing the device above the ratings listed in Table 14: Absolute maximum ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 14.
Symbol TBIAS TSTG VIO
(1)
Absolute maximum ratings
Value Parameter Min Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage - 50 - 65 - 0.6 - 0.6 Max 125 150 4.6 4.6 C C V V Unit
VDD
1. Minimum Voltage may undershoot to -2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
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NAND01GWxA2B-KGD
DC and AC parameters
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 15: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 15. Operating and AC measurement conditions
Value Parameter Min Supply voltage (VDD) Ambient temperature (TA) Load capacitance (CL) (1 TTL GATE and CL) Input pulses voltages Input and output timing ref. voltages Input rise and fall times Output circuit resistors, Rref 3 V devices Grade 6 2.7 - 3.6 V 3.0 - 3.6 V 0.4 1.5 5 8.35 2.7 -40 50 100 2.4 Max 3.6 85 V C pF pF V V ns k Units
Table 16.
Symbol CIN CI/O
Capacitance(1)(2)
Parameter Input capacitance Input/Output capacitance Test condition VIN = 0 V VIL = 0 V Typ Max 20 20 Unit pF pF
1. TA = 25 C, f = 1 MHz. CIN and CI/O are not 100% tested. 2. Input/output capacitances double on stacked devices.
31/48
DC and AC parameters Figure 13. Equivalent testing circuit for AC characteristics measurement
VDD
NAND01GWxA2B-KGD
2Rref
NAND Flash
CL
2Rref
GND
GND
Ai11085
Table 17.
Symbol IDD1 IDD2 IDD3 IDD4 IDD5 ILI ILO VIH VIL VOH VOL IOL (RB) VLKO
DC characteristics(1)
Parameter Sequential Read Program Erase Standby current (TTL), Standby current (CMOS) Input Leakage current Output Leakage current Input High voltage Input Low voltage Output High voltage level Output Low voltage level Output Low current (RB) VDD supply voltage (Erase and Program lockout) Test conditions tRLRL minimum E=VIL, IOUT = 0 mA E=VIH, WP=0V/VDD E=VDD-0.2, WP=0/VDD VIN= 0 to VDDmax VOUT= 0 to VDDmax IOH = -400 A IOL = 2.1 mA VOL = 0.4 V Min 0.8VDD -0.3 2.4 8 Typ 10 10 10 20 10 1.7 Max 20 20 20 1 100 10 10 VDD+0.3 0.2VDD 0.4 Unit mA mA mA mA A A A V V V V mA V
Operating current
1. Leakage currents double on stacked devices.
32/48
NAND01GWxA2B-KGD Table 18.
Symbol tALLWL tALHWL tCLHWL tCLS tCLLWL tDVWH tELWL tWHALH tWHALL tWHCLH tCLH tWHCLL tWHDX tWHEH tWHWL tWLWH(1) tWLWL tDH tCH tWH tWP tWC tDS tCS tALH
DC and AC parameters
AC characteristics for command, address, data input
Alt. Parameter Address Latch Low to Write Enable Low tALS Address Latch High to Write Enable Low Command Latch High to Write Enable Low Command Latch Low to Write Enable Low Data Valid to Write Enable High Chip Enable Low to Write Enable Low AL Setup time NAND01GW3A2B-KGD, NAND01GW4A2B-KGD Min 0 Unit
ns
CL Setup time
Min
0
ns
Data Setup time E Setup time
Min Min
20 0
ns ns
Write Enable High to Address Latch High AL Hold Write Enable High to Address Latch Low time Write Enable High to Command Latch High
Min
10
ns
CL hold time Min Write Enable High to Command Latch Low Write Enable High to Data Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Write Enable Low to Write Enable High Write Enable Low to Write Enable Low Data Hold time E Hold time Min Min
10
ns
10 10 15 25(1) 50
ns ns ns ns ns
W High Hold Min time W Pulse Width Write Cycle time Min Min
1. If tELWL is less than 10ns, tWLWH must be minimum 35 ns, otherwise, tWLWH may be minimum 25 ns.
33/48
DC and AC parameters Table 19. AC characteristics for operations
NAND01GWxA2B-KGD
Symbol
Alt.
Parameter
NAND01GW3A2BKGD, NAND01GW4A2BKGD Min Min Min Read Busy time Max Max Max Max Max Max Max Min Min Max Max Read Enable High Hold time Min Max Min 10 10 20 15 500 3 5 5 10 500 10 0 20 45 15 30 10
Unit
tALLRL1 tALLRL2 tBHRL tBLBH1 tBLBH2 tBLBH3
tAR tRR
Read Electronic Address Latch Low to Read Enable Low Signature Read cycle Ready/Busy High to Read Enable Low
ns ns ns s s ms s s s s ns ns ns ns ns ns ns
tPROG Ready/Busy Low to Ready/Busy High tBERS
Program Busy time Erase Busy time Reset Busy time, during ready Reset Busy time, during read
tBLBH4
tRST
Write Enable High to Ready/Busy High Reset Busy time, during program Reset Busy time, during erase
tCLLRL tDZRL tEHQZ tELQV tRHRL tRHQZ tEHQX tRHQX tRLRH tRLRL
tCLR tIR tCHZ tCEA tREH tRHZ TOH tRP tRC
Command Latch Low to Read Enable Low Data Hi-Z to Read Enable Low Chip Enable High to Output Hi-Z Chip Enable Low to Output Valid Read Enable High to Read Enable Low Read Enable High to Output Hi-Z Chip Enable high or Read Enable high to Output Hold Read Enable Pulse Width Read Cycle time Read Enable Access time
Read Enable Low to Read Enable High Read Enable Low to Read Enable Low
Min Min
25 50
ns ns
tRLQV
tREA
Read Enable Low to Output Valid Read ES Access time(1) Write Enable High to Ready/Busy High Write Enable High to Ready/Busy Low Write Enable High to Read Enable Low Read Busy time
Max
30
ns
tWHBH tWHBL tWHRL
tR tWB tWHR
Max Max Min
15 100 60
s ns ns
34/48
NAND01GWxA2B-KGD Table 19. AC characteristics for operations (continued)
DC and AC parameters
Symbol
Alt.
Parameter
NAND01GW3A2BKGD, NAND01GW4A2BKGD Write Cycle time Min Min 50 100
Unit
tWLWL tVHWH, tVLWH(2)
tWC tWW
Write Enable Low to Write Enable Low Write Protection time
ns ns
1. ES = Electronic Signature. 2. During a Program/Erase Enable Operation, tVHWH is the delay from WP high to W High. During a Program/Erase Disable Operation, tVLWH is the delay from WP Low to W High.
Figure 14. Command Latch AC waveforms
CL tCLHWL
(CL Setup time)
tWHCLL
(CL Hold time)
tELWL
(E Setup time)
tWHEH
(E Hold time)
E tWLWH W tALLWL
(ALSetup time)
tWHALH
(AL Hold time)
AL tDVWH
(Data Setup time)
tWHDX
(Data Hold time)
I/O
Command
ai08028
35/48
DC and AC parameters Figure 15. Address Latch AC waveforms
NAND01GWxA2B-KGD
(CL Setup time)
tCLLWL
CL tELWL tWLWL tWLWL tWLWL
(E Setup time)
E tWLWH W tALHWL
(AL Setup time)
tWLWH
tWLWH
tWLWH
tWHWL tWHALL
(AL Hold time)
tWHWL tWHALL
tWHWL tWHALL
AL tDVWH tDVWH tWHDX
(Data Hold time)
(Data Setup time)
tDVWH tWHDX Adrress cycle 2 Adrress cycle 3
tDVWH tWHDX Adrress cycle 4 tWHDX
I/O
Adrress cycle 1
ai08029
Figure 16. Data Input Latch AC waveforms
tWHCLH
(CL Hold time)
CL tWHEH
(E Hold time)
E
(ALSetup time)
tALLWL
tWLWL
AL tWLWH W tDVWH
(Data Setup time)
tWLWH
tWLWH
tDVWH tWHDX
(Data Hold time)
tDVWH tWHDX tWHDX
I/O
Data In 0
Data In 1
Data In Last
ai08030
36/48
NAND01GWxA2B-KGD Figure 17. Sequential Data Output after Read AC waveforms
DC and AC parameters
tEHQX tEHQZ
1. CL = Low, AL = Low, W = High.
Figure 18. Read Status Register AC waveform
tEHQX
37/48
DC and AC parameters Figure 19. Read Electronic Signature AC waveform
NAND01GWxA2B-KGD
CL
E
W
AL tALLRL1
R
(Read ES Access time)
tRLQV
I/O
90h
00h
Man. code
Device code
Read Electronic Signature Command
1st Cycle Address
Manufacturer and Device Codes
ai08039b
1. Refer to Table 11 for the values of the Manufacturer and Device Codes.
38/48
NAND01GWxA2B-KGD Figure 20. Page Read A/ Read B Operation AC waveform
DC and AC parameters
CL
E tWLWL W tWHBL AL tALLRL2 tWHBH tRLRL
(Read Cycle time)
tEHQZ
tRHQZ
R tRLRH tBLBH1 RB
I/O
00h or 01h Command Code
Add.N cycle 1
Add.N cycle 2
Add.N cycle 3
Add.N cycle 4 Busy
Data N
Data N+1
Data N+2
Data Last
Address N Input
Data Output from Address N to Last Byte or Word in Page tRHQX tEHQX
ai08033c
39/48
DC and AC parameters Figure 21. Read C Operation, One Page AC waveform
NAND01GWxA2B-KGD
CL
E
W tWHBH tWHALL AL tALLRL2 tBHRL R
I/O
50h
Add. M cycle 1
Add. M Add. M cycle 2 cycle 3
Add. M cycle 4
Data M
Data Last
RB Command Code Address M Input Busy Data Output from M to Last Byte or Word in Area C
ai08035b
1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are `Don't care'.
40/48
NAND01GWxA2B-KGD Figure 22. Page Program AC waveform
DC and AC parameters
CL
E tWLWL
(Write Cycle time)
tWLWL
tWLWL
W tWHBL tBLBH2
(Program Busy time)
AL
R
I/O
80h
Add.N cycle 1
Add.N Add.N Add.N cycle 2 cycle 3 cycle 4
N
Last
10h
70h
SR0
RB Page Program Setup Code Confirm Code
Address Input
Data Input
Page Program Read Status Register
ai08037
41/48
DC and AC parameters Figure 23. Block Erase AC waveform
NAND01GWxA2B-KGD
CL
E tWLWL
(Write Cycle time)
W tWHBL AL
(Erase Busy time)
tBLBH3
R
I/O
60h
Add. cycle 1
Add. Add. cycle 2 cycle 3
D0h
70h
SR0
RB Block Erase Setup Command Confirm Code Block Erase Read Status Register
ai08038b
Block Address Input
Figure 24. Reset AC waveform
W
AL CL
R I/O FFh tBLBH4
(Reset Busy time)
RB
ai08043
42/48
NAND01GWxA2B-KGD Figure 25. Program/Erase Enable waveform
DC and AC parameters
W tVHWH WP
RB
I/O
80h
10h
ai12477
Figure 26. Program/Erase Disable waveform
W tVLWH WP High RB
I/O
80h
10h
ai12478
43/48
DC and AC parameters
NAND01GWxA2B-KGD
10.1
Ready/Busy signal electrical characteristics
Figure 28, Figure 27 and Figure 29 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor RP can be calculated using the following equation:
(V - ) DDmax V OLmax R P min = ------------------------------------------------------------I OL + I L
So,
1.85V R P min ( 1.8V ) = -------------------------3mA + I L 3.2V R P min ( 3V ) = -------------------------8mA + I L
where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP max is determined by the maximum value of tr. Figure 27. Ready/Busy AC waveform
ready VDD VOH VOL busy tf tr
AI07564B
Figure 28. Ready/Busy load circuit
VDD
RP
ibusy
DEVICE RB Open Drain Output
VSS
AI07563B
44/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 29. Resistor value versus waveform timings for Ready/Busy signal
VDD = 3.3V, CL = 100pF 400
381
4
300 tr, tf (ns)
3.3
290
3 ibusy (mA)
200
1.89
2
1.65
100
96 4.2 4.2
0.825
1
0.6
0
4.2
4.2
1
2 RP (K) tf tr
3
4
ibusy
ai13145
1. T = 25C.
10.2
Data Protection
The Numonyx NAND device is designed to guarantee Data Protection during Power Transitions. A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold. In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept low (VIL) to guarantee hardware protection during power transitions as shown in the below figure.
Figure 30. Data protection
VDD
Nominal Range
VLKO
Locked
Locked
W
Ai11086
45/48
Ordering information
NAND01GWxA2B-KGD
11
Ordering information
Table 20.
Example:
Ordering Information Scheme
NAND01GW3A 2 B E0 6
Device Type NAND = NAND Flash memory
Density 01G = 1 Gb
Operating voltage W = VDD = 2.7 to 3.6 V
Bus width 3=x8 4 = x 16
Family identifier A = 528 bytes/ 264 word page
Device options 2 = Chip Enable Don't Care Enabled
Product version B = Second version
Package E0 = Unsawn wafer
Temperature range 6 = -40 to 85 C
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to '1'. For further information on any aspect of this device, please contact your nearest Numonyx Sales Office.
46/48
NAND01GWxA2B-KGD
Revision history
12
Revision history
Table 21.
Date 10-Aug-2006 24-Aug-2006
Document revision history
Revision 0.1 1 Initial release. Datasheet status updated to Preliminary data. Confidentiality level changed from Restricted Distribution to public. Datasheet status upgraded to `Full datasheet'. Data integrity of 100,000 specified for ECC implemented. Section 7.2 Block replacement replaced by Section 7.2: NAND Flash memory failure modes. tWHBH1 removed from Table 21: AC Characteristics for operations. Applied Numonyx branding. Changes
18-May-2007
2
04-Jan-2008
3
47/48
NAND01GWxA2B-KGD
Please Read Carefully:
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx B.V. All Rights Reserved.
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